Aluev, A V: search on Z-Library

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1

Single-mode laser diode at 778-nm wavelength: effect of p-doping

Eliseev, P.G., Chelny, A.A., Aluev, A.B., Davydova, E.I., Kobyakova, M.Sh., Morozyuk, A.A.

Journal:

IEEE Photonics Technology Letters

Year:

2002

Language:

english

File:

PDF, 47 KB

english, 2002

2

White light source with laser-excited phosphor

Abdullaev, O R, Aluev, A V, Akhmerov, Yu L, Kourova, N V, Mezhennyi, M V, Chelny, A A

Journal:

Quantum Electronics

Year:

2017

Language:

english

File:

PDF, 1.95 MB

english, 2017

3

SPIE Proceedings [SPIE Photonics West '95 - San Jose, CA (Wednesday 1 February 1995)] Optoelectronic Integrated Circuit Materials, Physics, and Devices - AlGaInP/GaInP visible laser diodes with extremely high characteristic temperature T0

Chelny, Alexander A., Gorbylev, Vladimir A., Aluev, Alexander, Eliseev, Petr G., Konyaev, Vadim P., Zverkov, Michail V., Krichevsky, Victor I., Polyakov, Alexander Y., Razeghi, Manijeh, Park, Yoon-Soo

Year:

1995

Language:

english

File:

PDF, 414 KB

english, 1995

4

Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP

A.Y Polyakov, A.A Chelniy, A.V Govorkov, N.B Smirnov, A.G Milnes, S.J Pearton, R.G Wilson, A.A Balmashnov, A.N Aluev, A.V Markov

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 475 KB

english, 1995

5

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures

A. A. Chel'nyi, A. V. Aluev, S. V. Maslov

Year:

2004

Language:

english

File:

PDF, 973 KB

english, 2004

6

The GGS computer-aided design system for earth-filled hydrotechnical structures

G. A. Rapoport, V. A. Aluev, G. I. Goncharovskii, A. O. Liberman, V. V. Polyakov

Journal:

Power Technology and Engineering

Year:

2000

Language:

english

File:

PDF, 257 KB

english, 2000

7

High-power 2.5-W cw AlGaAs/GaAs laser diodes

A. V. Aluev, A. M. Morozyuk, M. S. Kobyakova, A. A. Chel'nyi

Year:

2001

Language:

english

File:

PDF, 127 KB

english, 2001

8

Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.A. Chelniy, A.G. Milnes, Xiaolei Li, B.M. Leiferov, A.N. Aluev

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 273 KB

english, 1996

9

The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD

A.Y. Polyakov, A.A. Chelniy, N.B. Smirnov, A.V. Govorkov, A.G. Milnes, Xiaolei Li, A.N. Aluev, P.B. Orlov

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 311 KB

english, 1996

10

GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm

A. V. Aluev, A. Yu. Leshko, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, A. A. Chelny, V. V. Shamakhov, V. A. Simakov, I. S. Tarasov

Journal:

Year:

2009

Language:

english

File:

PDF, 179 KB

english, 2009

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